The scientific basis of Ginestra™ Physics

Multiscale Modeling Framework

Ferroelectric

  • MDLSoft presents a multiscale simulation platform as a viable tool to engineer novel electron devices. The tool connects the specific material properties (as atomic defects, interfaces, material morphology) to the electrical behavior of the device, representing a virtual space for the design of novel electrons device purposely exploiting atom-electron interactions.

    MDLSoft presents a multiscale simulation platform as a viable tool to engineer novel electron devices. The tool connects the specific material properties (as atomic defects, interfaces, material morphology) to the electrical behavior of the device, representing a virtual space for the design of novel electrons device purposely exploiting atom-electron interactions.

    26th International Workshop on Power and Timing Modeling, Optimization and Simulation, PATMOS 201625 January 2017

    Read More
  • MDLSoft presents a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dielectrics (charge trapping and transport, degradation and atomic species motion) to interpret the reliability and electrical characteristics of logic and memory devices.

    MDLSoft presents a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dielectrics (charge trapping and transport, degradation and atomic species motion) to interpret the reliability and electrical characteristics of logic and memory devices.

    24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017; Chengdu; China; 4 July 2017 through 7 July 2017

    Read More
  • Andrea Padovani, MDLSoft co-founder, describes a multiscale modeling platform connecting the microscopic properties of the resistive switching material to the electrical characteristics and operation of RRAM devices.

    Andrea Padovani, MDLSoft co-founder, describes a multiscale modeling platform connecting the microscopic properties of the resistive switching material to the electrical characteristics and operation of RRAM devices.

    Journal of Computational ElectronicsVolume 16, Issue 4, 1 December 2017

    Read More
  • MDLSfot presents a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dieledtrics (charge trapping and transport, degradation and atomic species motion) to interpret and understand the electrical characteristics of OxRAM memory devices for non-volatile memories and neuromorphic applications.

    MDLSfot presents a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dieledtrics (charge trapping and transport, degradation and atomic species motion) to interpret and understand the electrical characteristics of OxRAM memory devices for non-volatile memories and neuromorphic applications.

    17th Non-Volatile Memory Technology Symposium, NVMTS 2017; RWTH Aachen UniversityAachen; Germany; 30 August 2017 through 1 September 2017

    Read More
  • 1
  • 2

 

 

  • In this paper, Milan Pesic, Technical Manager of MDLSoft, investigates the possibility to bypass the usage of asymmetric workfunction electrodes. Using the interface-engineering approach, based on fixed charge or dipole formation, we show two additional methods for built-in bias generation within AFE layer stacks.

    In this paper, Milan Pesic, Technical Manager of MDLSoft, investigates the possibility to bypass the usage of asymmetric workfunction electrodes. Using the interface-engineering approach, based on fixed charge or dipole formation, we show two additional methods for built-in bias generation within AFE layer stacks.

    IEEE Journal of the Electron Devices Society ( Volume: 6 )

    Read More
  • In this paper, Milan Pesic, Technical Manager of MDLSoft, will discuss physical and circuit modeling approaches for FE memories connecting the FE HfO 2 materials properties to the electrical performances of memory cells, artificial synapse for neuromorphic and in memory computing applications.

    In this paper, Milan Pesic, Technical Manager of MDLSoft, will discuss physical and circuit modeling approaches for FE memories connecting the FE HfO 2 materials properties to the electrical performances of memory cells, artificial synapse for neuromorphic and in memory computing applications.

    2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

    Read More
  • Novel hafnium oxide (HfO2)‐based ferroelectrics reveal full scalability and complementary metal oxide semiconductor integratability compared to perovskite‐based ferroelectrics that are currently used in nonvolatile ferroelectric random access memories (FeRAMs). Within the lifetime of the device, two main regimes of wake‐up and fatigue can be identified. Up to now, the mechanisms behind these two device stages have not been revealed. Thus, in this study, MDLSoft  is investigating the root cause for the increase of the remnant polarization during the wake‐up phase and subsequent polarization degradation with further cycling.

    Novel hafnium oxide (HfO2)‐based ferroelectrics reveal full scalability and complementary metal oxide semiconductor integratability compared to perovskite‐based ferroelectrics that are currently used in nonvolatile ferroelectric random access memories (FeRAMs). Within the lifetime of the device, two main regimes of wake‐up and fatigue can be identified. Up to now, the mechanisms behind these two device stages have not been revealed. Thus, in this study, MDLSoft is investigating the root cause for the increase of the remnant polarization during the wake‐up phase and subsequent polarization degradation with further cycling.

    Advanced Functional Materials, 2016

    Read More
  • HfO2-based ferroelectrics reveal full scalability and CMOS integratability compared to perovskite-based ferroelectrics that are currently used in non-volatile ferroelectric random access memories (FeRAMs). Up to now, the mechanisms responsible for the decrease of the memory window have not been revealed. Thus, in this study, MDLSoft  is investigating  the root causes for the endurance degradation

    HfO2-based ferroelectrics reveal full scalability and CMOS integratability compared to perovskite-based ferroelectrics that are currently used in non-volatile ferroelectric random access memories (FeRAMs). Up to now, the mechanisms responsible for the decrease of the memory window have not been revealed. Thus, in this study, MDLSoft is investigating the root causes for the endurance degradation

    2016 IEEE International Reliability Physics Symposium (IRPS)

    Read More
  • 1