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  • Dipu Pramanik, CEO/Co-founder of MDLSoft is giving a talk  at Stanford System-X Alliance seminar series on April 5th 2018. The title of his presentation is “ Modeling and Simulation for neuromorphic applications with focus on RRAM and ferroelectric devices”.

    Dipu Pramanik, CEO/Co-founder of MDLSoft is giving a talk at Stanford System-X Alliance seminar series on April 5th 2018. The title of his presentation is “ Modeling and Simulation for neuromorphic applications with focus on RRAM and ferroelectric devices”.

  • MDLSoft participated in EDTM 2018 in Kobe, Japan (March 12-15, 2018) as exhibitor and speaker (presenting a paper on “Defect spectroscopy from electrical measurements: a simulation-based technique.” In this paper we will present a Ginestra™-based defect spectroscopy technique for extracting defect and material properties of gate oxides and dielectrics).

    MDLSoft participated in EDTM 2018 in Kobe, Japan (March 12-15, 2018) as exhibitor and speaker (presenting a paper on “Defect spectroscopy from electrical measurements: a simulation-based technique.” In this paper we will present a Ginestra™-based defect spectroscopy technique for extracting defect and material properties of gate oxides and dielectrics).

  • MDLSoft partecipated in IRPS 2018 presenting a paper on“ Time-dependent Dielectric Breakdown Statistics in SiO2 and HfO2 Dielectrics: Insights from a Multi-Scale Modeling Approach.”

    MDLSoft partecipated in IRPS 2018 presenting a paper on“ Time-dependent Dielectric Breakdown Statistics in SiO2 and HfO2 Dielectrics: Insights from a Multi-Scale Modeling Approach.”

    In this paper the authors use physics-based breakdown simulations to investigate the time dependent dielectric breakdown (TDDB) distributions of SiO2 and HfO2 stacks. They show that the low thickness-independent TDDB Weibull slope (b) measured in HfO2 originates from the high intrinsic density and spatially correlated defect generation process. They prove also that the double slope observed in TDDB distributions of IL-HfOx stacks is also related to the stochastic nature of the bond breakage process in SiO2 and HfO2.

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  • MDLSoft participated in IEDM 2017 conference as exhibitor and speaker (presented paper on “Multiscale modeling of neuromorphic computing devices : from materials to device operations ”) received an overwhelming response to their multiscale solution platform Ginestra™

    MDLSoft participated in IEDM 2017 conference as exhibitor and speaker (presented paper on “Multiscale modeling of neuromorphic computing devices : from materials to device operations ”) received an overwhelming response to their multiscale solution platform Ginestra™

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  • MDLSOft continues to push the boundaries of the IM2D (Integrated Materials to Devices) flow with the release of GINESTRA v 2.1. The release includes  new features  such as  Defect Spectroscopy, MOSFET Simulator, Ferroelectric Devices Simulator and significantly enhanced Output Viewer

    MDLSOft continues to push the boundaries of the IM2D (Integrated Materials to Devices) flow with the release of GINESTRA v 2.1. The release includes new features such as Defect Spectroscopy, MOSFET Simulator, Ferroelectric Devices Simulator and significantly enhanced Output Viewer

  • Accurate prediction of device reliability from fundamental properties of point defects in dielectric stacks

    Accurate prediction of device reliability from fundamental properties of point defects in dielectric stacks

    Dipu Pramanik

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  • A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling

    A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling

    Padovani A., Gao D.Z., Shluger A.L., Larcher L., 2017

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  • Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modelling

    Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modelling

    Puglisi F.M., Pavan P., Larcher L, 2016

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