Ginestra™ for Resistive RAM Simulations

 

 

Salient Features


  • Simulation of a full FORMING-RESET-SET cycle

  • FORMING: Field-Induced Temperature-Driven positive feedback

    • Field and Temperature-Driven diffusion of atomic species

  • RESET: Partial oxidation of the Conductive Filament due to Field-Driven diffusion of oxygen ions

  • SET: Field-Induced breakdown of the oxide barrier

    • Oxygen diffusion recreates the oxygen reservoir

 

 

Ginestra™ RRAM Simulations

 

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