Ginestra™ Ferroelectric: Improved description of polarization switching and kinetics in ferroelectric logic (NC-FETs) and memory devices (FeFETs)


Salient Features

  • Worlds' first solution combining time dependent Ginzburg-Landau (TDGL) and advanced charge transport (discrete defects)

  • De-convolution of the charge and ferroelectric interplay

  • Straightforward analysis and prediction of variability and reliability

  • NC-FETs, Memory FeFET and AI


Self-consistent Poisson-TDGL-charge transport that enables accurate prediction of device variability and reliability